×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [13]
作者
文献类型
会议论文 [13]
发表日期
2009 [1]
2008 [1]
2006 [3]
2005 [1]
2004 [1]
2003 [1]
更多...
语种
英语 [13]
出处
2008 9TH I... [1]
ADVANCED M... [1]
FERROELECT... [1]
IEEE TRANS... [1]
INTEGRATED... [1]
JOURNAL OF... [1]
更多...
资助项目
收录类别
CPCI-S [11]
CPCI(ISTP) [1]
其他 [1]
资助机构
Chinese As... [1]
Chinese Ma... [1]
IEEE Beiji... [1]
IEEE. [1]
Japan Soc ... [1]
Japan Soc ... [1]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共13条,第1-10条
帮助
限定条件
语种:英语
文献类型:会议论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
WOS被引频次升序
WOS被引频次降序
期刊影响因子升序
期刊影响因子降序
题名升序
题名降序
作者升序
作者降序
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
  |  
收藏
  |  
浏览/下载:1721/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Liu, YF
;
Xie, J
;
Yang, JL
;
Tang, LJ
;
Yang, FH
;
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)
  |  
收藏
  |  
浏览/下载:1456/370
  |  
提交时间:2010/03/09
Films
Deep levels in high resistivity GaN epilayers grown by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Fang, CB
;
Wang, XL
;
Wang, JX
;
Liu, C
;
Wang, CM
;
Hu, GX
;
Li, JP
;
Li, CJ
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)
  |  
收藏
  |  
浏览/下载:1391/262
  |  
提交时间:2010/03/29
Thermally Stimulated Current
Gallium Nitride
Defects
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Li, Z (Li, Z.)
;
Li, CJ (Li, C. J.)
;
Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)
  |  
收藏
  |  
浏览/下载:1337/373
  |  
提交时间:2010/03/29
Dlts
Growth and characterization of semi-insulating GaN films grown by MOCVD
会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:
Fang, CB
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Wang, CM
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)
  |  
收藏
  |  
浏览/下载:1400/359
  |  
提交时间:2010/03/29
Mocvd
Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938
会议论文
Passive Components and Fiber-based Devices II丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Yang, H
;
Zhu, HL
;
Xie, HY
;
Zhao, LJ
;
Zhou, F
;
Wang, W
;
Yang, H, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(302Kb)
  |  
收藏
  |  
浏览/下载:1725/315
  |  
提交时间:2010/03/29
Coplanar Waveguide (Cpw)
v Groove
Low Microwave Loss
Passive Coupling
Optoelectronic Packaging
Influence of the rapid thermal annealing on the properties of thin a-Si films
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Nedev N
;
Beshkov G
;
Fortunato E
;
Georgiev SS
;
Ivanov T
;
Raniero L
;
Zhang SB
;
Martins R
;
Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
Adobe PDF(242Kb)
  |  
收藏
  |  
浏览/下载:1162/183
  |  
提交时间:2010/10/29
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
;
Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)
  |  
收藏
  |  
浏览/下载:1765/328
  |  
提交时间:2010/11/15
Neutron Irradiation
Annealing
Defects In Silicon
Spectra
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
;
Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)
  |  
收藏
  |  
浏览/下载:1070/178
  |  
提交时间:2010/11/15
Bi2ti2o7
Thin Film
Mocvd
(111) Orientation
Chemical-vapor-deposition
Crystal Thin-films
Modulation magnesium-doping in AlGaN/GaN superlattices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:
Liu XL
;
Yuan HR
;
Lu DC
;
Wang XH
;
Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)
  |  
收藏
  |  
浏览/下载:1056/178
  |  
提交时间:2010/10/29
Mg-doped
Algan/gan Superlattices
Resistivity
Hole Concentration
Polarization