Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ; Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
2002
会议名称10th International Meeting on Ferroelectricity (IMF-10)
会议录名称FERROELECTRICS, 271
页码1707-1713
会议日期SEP 03-07, 2001
会议地点MADRID, SPAIN
出版地4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
出版者TAYLOR & FRANCIS LTD
ISSN0015-0193
部门归属shandong univ, state key lab crystal mat, jinan 250100, peoples r china; shandong univ, dept environm engn, jinan 250100, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).
关键词Bi2ti2o7 Thin Film Mocvd (111) Orientation Chemical-vapor-deposition Crystal Thin-films
学科领域光电子学
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14891
专题中国科学院半导体研究所(2009年前)
通讯作者Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
推荐引用方式
GB/T 7714
Wang H,Shang SX,Yao WF,et al. Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD[C]. 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND:TAYLOR & FRANCIS LTD,2002:1707-1713.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
2870.pdf(1640KB) 限制开放--请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Wang H]的文章
[Shang SX]的文章
[Yao WF]的文章
百度学术
百度学术中相似的文章
[Wang H]的文章
[Shang SX]的文章
[Yao WF]的文章
必应学术
必应学术中相似的文章
[Wang H]的文章
[Shang SX]的文章
[Yao WF]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。