SEMI OpenIR

Browse/Search Results:  1-10 of 33 Help

Selected(0)Clear Items/Page:    Sort:
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 12, 页码: 127301
Authors:  Yan Jun-Da;  Wang Quan;  Wang Xiao-Liang;  Xiao Hong-Ling;  Jiang Li-Juan;  Yin Hai-Bo;  Feng Chun;  Wang Cui-Mei;  Qu Shen-Qi;  Gong Jia-Min;  Zhang Bo;  Li Bai-Quan;  Wang Zhan-Guo;  Hou Xun
Adobe PDF(712Kb)  |  Favorite  |  View/Download:240/4  |  Submit date:2016/03/29
The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 5, 页码: 7101
Authors:  WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong
Adobe PDF(974Kb)  |  Favorite  |  View/Download:308/134  |  Submit date:2014/03/18
The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 6, 页码: 068402
Authors:  LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun
Adobe PDF(661Kb)  |  Favorite  |  View/Download:639/87  |  Submit date:2014/03/17
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 057104
Authors:  Hou QF (Hou Qi-Feng);  Wang XL (Wang Xiao-Liang);  Xiao;  HL (Xiao Hong-Ling);  Wang CM (Wang Cui-Mei);  Yang CB (Yang Cui-Bai);  Li JM (Li Jin-Min);  Hou, QF, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qfhou@semi.ac.cn
Adobe PDF(447Kb)  |  Favorite  |  View/Download:1261/355  |  Submit date:2010/05/24
N-type Gan  Deep Levels  Selenide  Defects  
氮化镓基高电子迁移率晶体管结构 专利
专利类型: 发明, 申请日期: 2009-04-01, 公开日期: 3990
Inventors:  王晓亮;  唐 健;  肖红领;  王翠梅;  冉学军;  胡国新;  李晋敏 
Adobe PDF(486Kb)  |  Favorite  |  View/Download:985/220  |  Submit date:2010/03/19
倒装双结铟镓氮太阳能电池结构 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  杨翠柏;  肖红领;  胡国新;  冉学军;  王翠梅;  张小宾;  李晋闽
Adobe PDF(676Kb)  |  Favorite  |  View/Download:1031/220  |  Submit date:2009/06/11
单结铟镓氮太阳能电池结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-07-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  肖红领;  杨翠柏;  胡国新;  冉学军;  王翠梅;  张小宾;  李建平;  李晋闽
Adobe PDF(676Kb)  |  Favorite  |  View/Download:1070/246  |  Submit date:2009/06/11
生长氮化铟单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-07-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  肖红领;  胡国新;  杨翠柏;  冉学军;  王翠梅;  张小宾;  李建平;  李晋闽
Adobe PDF(480Kb)  |  Favorite  |  View/Download:972/200  |  Submit date:2009/06/11
氮化镓基双异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-07-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  冉学军;  肖红领;  王翠梅;  胡国新;  唐健;  罗卫军
Adobe PDF(986Kb)  |  Favorite  |  View/Download:928/188  |  Submit date:2009/06/11
氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马志勇;  王晓亮;  冉军学;  胡国新;  肖红领;  王翠梅;  罗卫军
Adobe PDF(1062Kb)  |  Favorite  |  View/Download:958/181  |  Submit date:2009/06/11