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Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 10, 页码: 104209
Authors:  Dong, Y;  Wang, GL;  Wang, HP;  Ni, HQ;  Chen, JH;  Gao, FQ;  Qiao, ZT;  Yang, XH;  Niu, ZC
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Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 23, 页码: 232104
Authors:  Shang, ZJ;  Zheng, XH;  Yang, C;  Chen, Y;  Li, B;  Sun, L;  Tang, Z;  Zhao, DG
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Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 118503
Authors:  Li B (Li Bin);  Yang HW (Yang Huai-Wei);  Gui Q (Gui Qiang);  Yang XH (Yang Xiao-Hong);  Wang J (Wang Jie);  Wang XP (Wang Xiu-Ping);  Liu SQ (Liu Shao-Qing);  Han Q (Han Qin)
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High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 1, 页码: 18502
Authors:  Wang, J;  Han, Q;  Yang, XH;  Ni, HQ;  He, JF;  Wang, XP
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Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
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V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 卷号: 29, 期号: 4, 页码: 41208
Authors:  Wang J;  Han Q;  Yang XH;  Wang XP;  Ni HQ;  He JF;  Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn
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Hydrogen-peroxide Solutions  Iii-v Semiconductors  Pseudomorphic Modfets  Gaas  Fabrication  Transistor  Algaas  
Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 22, 页码: Art. No. 221906
Authors:  Huang J;  Xu K;  Gong XJ;  Wang JF;  Fan YM;  Liu JQ;  Zeng XH;  Ren GQ;  Zhou TF;  Yang H
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Berkovich Nanoindentation  Thin-films  Indentation  Mechanisms  Epilayers  
含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作 期刊论文
科学通报, 2011, 卷号: 56, 期号: 2, 页码: 174-178
Authors:  唐龙娟;  郑新和;  张东炎;  董建荣;  王辉;  杨辉
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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 20, 页码: Article no.201104
Authors:  Liu SQ;  Han Q;  Zhu B;  Yang XH;  Ni HQ;  He JF;  Wang X;  Li MF;  Zhu Y;  Wang J;  Wang XP;  Niu ZC;  Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn;  hanqin@red.semi.ac.cn
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I-n Photodiodes  
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 13, 页码: Art. No. 132908
Authors:  Zheng XH (Zheng X. H.);  Huang AP (Huang A. P.);  Xiao ZS (Xiao Z. S.);  Yang ZC (Yang Z. C.);  Wang M (Wang M.);  Zhang XW (Zhang X. W.);  Wang WW (Wang W. W.);  Chu PK (Chu Paul K.);  Huang, AP, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址: aphuang@buaa.edu.cn
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Oxygen  Gate  Diffusion  Films