SEMI OpenIR  > 半导体超晶格国家重点实验室
Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes
Li, MF; Ni, HQ; Ding, Y; David, B; Kong, L; Ana, CM; Niu, ZC
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:2Pages:027803
Subject Area半导体物理
Indexed BySCI
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26454
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, MF,Ni, HQ,Ding, Y,et al. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes[J]. CHINESE PHYSICS B,2014,23(2):027803.
APA Li, MF.,Ni, HQ.,Ding, Y.,David, B.,Kong, L.,...&Niu, ZC.(2014).Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes.CHINESE PHYSICS B,23(2),027803.
MLA Li, MF,et al."Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes".CHINESE PHYSICS B 23.2(2014):027803.
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