SEMI OpenIR

Browse/Search Results:  1-10 of 42 Help

Selected(0)Clear Items/Page:    Sort:
Optical properties of magnesium doped AlxGa1-xN (0.61 <= x <= 0.73) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 14, 页码: 143103
Authors:  Feneberg, M;  Osterburg, S;  Romero, MF;  Garke, B;  Goldhahn, R;  Neumann, MD;  Esser, N;  Yan, JC;  Zeng, JP;  Wang, JX;  Li, JM
Adobe PDF(1458Kb)  |  Favorite  |  View/Download:400/55  |  Submit date:2015/03/25
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
Authors:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS;  Feng, MX;  Li, ZC;  Zhou, K;  Wang, F;  Wang, HB;  Wang, H;  Yang, H
Adobe PDF(1040Kb)  |  Favorite  |  View/Download:386/65  |  Submit date:2015/03/25
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
Adobe PDF(2410Kb)  |  Favorite  |  View/Download:365/75  |  Submit date:2015/03/25
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
Adobe PDF(2410Kb)  |  Favorite  |  View/Download:500/93  |  Submit date:2015/03/25
Thermal analysis of GaN laser diodes in a package structure 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 8, 页码: 084209
Authors:  Feng MX (Feng Mei-Xin);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu JP (Liu Jian-Ping);  Wang H (Wang Hui);  Zeng C (Zeng Chang);  Li ZC (Li Zeng-Cheng);  Wang HB (Wang Huai-Bing);  Wang F (Wang Feng);  Yang H (Yang Hui)
Adobe PDF(299Kb)  |  Favorite  |  View/Download:969/405  |  Submit date:2013/04/02
Thermal characterization of GaN-based laser diodes by forward-voltage method 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 9, 页码: 94513
Authors:  Feng, MX;  Zhang, SM;  Jiang, DS;  Liu, JP;  Wang, H;  Zeng, C;  Li, ZC;  Wang, HB;  Wang, F;  Yang, H
Adobe PDF(635Kb)  |  Favorite  |  View/Download:898/361  |  Submit date:2013/03/17
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 1, 页码: 17301
Authors:  Zeng, C;  Zhang, SM;  Wang, H;  Liu, JP;  Wang, HB;  Li, ZC;  Feng, MX;  Zhao, DG;  Liu, ZS;  Jiang, DS;  Yang, H
Adobe PDF(619Kb)  |  Favorite  |  View/Download:802/242  |  Submit date:2013/03/17
Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2012, 卷号: 55, 期号: 4, 页码: 883-887
Authors:  Feng, MX;  Zhang, SM;  Jiang, DS;  Wang, H;  Liu, JP;  Zeng, C;  Li, ZC;  Wang, HB;  Wang, F;  Yang, H
Adobe PDF(550Kb)  |  Favorite  |  View/Download:731/229  |  Submit date:2013/03/17
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 24, 页码: 241111
Authors:  Zhang, L;  Wei, XC;  Liu, NX;  Lu, HX;  Zeng, JP;  Wang, JX;  Zeng, YP;  Li, JM;  Zhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn
Adobe PDF(1398Kb)  |  Favorite  |  View/Download:1214/411  |  Submit date:2012/02/06
Algan/gan Heterostructures  Transport-properties  
Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 257, 期号: 2, 页码: 423-428
Authors:  Wang ZJ (Wang Zhijie);  Qu SC (Qu Shengchun);  Zeng XB (Zeng Xiangbo);  Liu JP (Liu Junpeng);  Tan FR (Tan Furui);  Jin L (Jin Lan);  Wang ZG (Wang Zhanguo);  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: qsc@semi.ac.cn
Adobe PDF(396Kb)  |  Favorite  |  View/Download:1516/520  |  Submit date:2010/10/11
Bulk Heterojunction Solar Cells  Surface Modification  Nanorods