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Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 21, 页码: 4562-4567
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Zhang, YH;  Hu, Q;  Wei, XC;  Sun, BJ;  Duan, RF;  Wang, JX
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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH;  Duan, RF;  Wang, JX
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Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 9, 页码: 096802
Authors:  Zhao, Y;  Wang, G;  Yang, HC;  An, TL;  Chen, MJ;  Yu, F;  Tao, L;  Yang, JK;  Wei, TB;  Duan, RF;  Sun, LF
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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 13, 页码: A1093-A1100
Authors:  Wei, TB;  Huo, ZQ;  Zhang, YH;  Zheng, HY;  Chen, Y;  Yang, JK;  Hu, Q;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
MATERIALS LETTERS, 2012, 卷号: 68, 页码: 327-330
Authors:  Wei, TB;  Chen, Y;  Hu, Q;  Yang, JK;  Huo, ZQ;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM;  Liao, YX;  Yin, FT
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
金属有机物化学气相沉积装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  段瑞飞;  王军喜;  王国宏;  曾一平;  李晋闽
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Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 7, 页码: H721-H726
Authors:  Wei TB (Wei T. B.);  Hu Q (Hu Q.);  Duan RF (Duan R. F.);  Wei XC (Wei X. C.);  Yang JK (Yang J. K.);  Wang JX (Wang J. X.);  Zeng YP (Zeng Y. P.);  Wang GH (Wang G. H.);  Li JM (Li J. M.);  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
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Atomic Force Microscopy  
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
RARE METAL MATERIALS AND ENGINEERING, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  Hu QA;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
Adobe PDF(873Kb)  |  Favorite  |  View/Download:1214/381  |  Submit date:2011/07/05
Gan  Hvpe  Freestanding Thick Films  Stress Release  Photoluminescence  Vapor-phase Epitaxy  Growth  Pressure  Hvpe