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Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
RARE METAL MATERIALS AND ENGINEERING, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  Hu QA;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
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Gan  Hvpe  Freestanding Thick Films  Stress Release  Photoluminescence  Vapor-phase Epitaxy  Growth  Pressure  Hvpe  
自支撑GaN厚膜制备及其光学性能研究 期刊论文
稀有金属材料与工程, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  胡强;  魏同波;  段瑞飞;  羊建坤;  霍自强;  卢铁城;  曾一平
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Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 9, 页码: Art. No. 096801
Authors:  Hu Q;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu Q Sichuan Univ Minist Educ Dept Phys Chengdu 610064 Peoples R China. E-mail Address: lutiecheng@scu.edu.cn;  ypzeng@red.semi.ac.cn
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Vapor-phase Epitaxy  Dislocations  Substrate  Layer