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Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 21, 页码: 4562-4567
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Zhang, YH;  Hu, Q;  Wei, XC;  Sun, BJ;  Duan, RF;  Wang, JX
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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH;  Duan, RF;  Wang, JX
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Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes 期刊论文
AIP ADVANCES, 2014, 卷号: 4, 期号: 6, 页码: 067119
Authors:  Wei, TB;  Wu, K;  Lan, D;  Sun, B;  Zhang, YH;  Chen, Y;  Huo, ZQ;  Hu, Q;  Wang, JX;  Zeng, YP;  Li, JM
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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 13, 页码: A1093-A1100
Authors:  Wei, TB;  Huo, ZQ;  Zhang, YH;  Zheng, HY;  Chen, Y;  Yang, JK;  Hu, Q;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM
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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
MATERIALS LETTERS, 2012, 卷号: 68, 页码: 327-330
Authors:  Wei, TB;  Chen, Y;  Hu, Q;  Yang, JK;  Huo, ZQ;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM;  Liao, YX;  Yin, FT
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
RARE METAL MATERIALS AND ENGINEERING, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  Hu QA;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
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Gan  Hvpe  Freestanding Thick Films  Stress Release  Photoluminescence  Vapor-phase Epitaxy  Growth  Pressure  Hvpe  
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 9, 页码: Art. No. 096801
Authors:  Hu Q;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu Q Sichuan Univ Minist Educ Dept Phys Chengdu 610064 Peoples R China. E-mail Address: lutiecheng@scu.edu.cn;  ypzeng@red.semi.ac.cn
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Vapor-phase Epitaxy  Dislocations  Substrate  Layer  
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
Authors:  Wei TB;  Hu Q;  Duan RF;  Wei XC;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei TB Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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Hrxrd  Pl  Stacking Fault  Hvpe  Gan  Semipolar  
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 Part 1
Authors:  Wei, TB;  Duan, RF;  Wang, JX;  Li, JM;  Huo, ZQ;  Yang, JK;  Zeng, YP;  Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
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Hvpe  Gan  Sapphire  Nonpolar  Semipolar