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Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 卷号: 29, 期号: 2, 页码: Article no.21018
Authors:  Li WL;  Jia R;  Chen C;  Li HF;  Liu XY;  Yue HH;  Ding WC;  Ye TC;  Kasai S;  Hashizume T;  Wu NJ;  Xu BS;  Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn
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Si Nanocrystals  Memory  Technology  Deposition  Voltage  Layer  
Plasmonic Polymer Tandem Solar Cell 期刊论文
ACS NANO, 2011, 卷号: 5, 期号: 8, 页码: 6210-6217
Authors:  Yang J;  You JB;  Chen CC;  Hsu WC;  Tan HR;  Zhang XW;  Hong ZR;  Yang Y;  Yang, J (reprint author), Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA. yangy@ucla.edu
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Photovoltaic Cells  Absorption Enhancement  Self-organization  Efficiency  Nanoclusters  Fluorescence  Resonance  Design  Blends  
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 14, 页码: Art. No. 141902
Authors:  Chen YH;  Li C;  Zhou ZW;  Lai HK;  Chen SY;  Ding WC;  Cheng BW;  Yu YD;  Li C Xiamen Univ Dept Phys Semicond Photon Res Ctr Xiamen 361005 Peoples R China. E-mail Address: lich@xmu.edu.cn
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Chemical Vapour Deposition  Elemental Semiconductors  Energy Gap  Germanium  Ge-si Alloys  Photoluminescence  Semiconductor Epitaxial Layers  Semiconductor Quantum Wells  Silicon  Tensile Strength  
Strong visible and infrared photoluminescence from Er-implanted silicon nitride films 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 13, 页码: Art. No. 135101
Authors:  Ding WC;  Hu D;  Zheng J;  Chen P;  Cheng BW;  Yu JZ;  Wang QM;  Ding, WC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: wcd04@semi.ac.cn
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1.54 Mu-m  
Space growth studies of Ce-doped Bi12SiO20 single crystal 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 卷号: 113, 期号: 3, 页码: 179-183
Authors:  Zhou YF;  Wang JC;  Tang LA;  Pan ZL;  Chen NF;  Chen WC;  Huang YY;  He W;  Zhou, YF, Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China. 电子邮箱地址: yfzhou@sunm.shcnc.ac.cn
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Bridgman Technique  
Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment 期刊论文
JOURNAL OF INORGANIC MATERIALS, 2004, 卷号: 19, 期号: 2, 页码: 283-288
Authors:  Zhou YF;  Wang JC;  Tang LA;  Chen NF;  Chen WC;  Zhou, YF, Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China.
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Doped Cerium Bismuth Silicon Oxides (Ce : Bso)  
在多工位炉上CeO_2:Bi_12SiO_20单晶生长的研究(II)——空间生长实验部分 期刊论文
无机材料学报, 2004, 卷号: 19, 期号: 2, 页码: 283-288
Authors:  周燕飞;  王锦昌;  唐连安;  陈诺夫;  陈万春
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缓冲层生长压力对MOCVD GaN性能的影响 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 1
Authors:  陈俊;  张书明;  张宝顺;  朱建军;  冯淦;  段俐宏;  王玉田;  杨辉;  郑文琛
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Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Duan LH;  Wang YT;  Yang H;  Zheng WC;  Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
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Gallium Nitride  Mocvd  In Situ Laser Reflectometry  Chemical-vapor-deposition  In-situ  Sapphire Substrate  Nucleation Layers  Films  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature