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4H-SiC基AlN栅介质原子层沉积生长研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  陈俊
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Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 39-42
Authors:  Zhang Changsha;  Zeng Xiangbo;  Peng Wenbo;  Shi Mingji;  Liu Shiyong;  Xiao Haibo;  Wang Zhanguo;  Chen Jun;  Wang Shuangqing
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Photoluminescence degradation in GaN induced by light enhanced surface oxidation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 102, 期号: 7, 页码: Art.No.076112
Authors:  Liu WB (Liu Wenbao);  Sun X (Sun Xian);  Zhang S (Zhang Shuang);  Chen J (Chen Jun);  Wang H (Wang Hui);  Wang XL (Wang Xiaolan);  Zhao DG (Zhao Degang);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wbliu@semi.ac.cn
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Gaas-surfaces  
蓝紫光InGaN多量子阱激光器 期刊论文
中国科学. E辑， 技术科学, 2007, 卷号: 37, 期号: 3, 页码: 356-359
Authors:  李德尧;  张书明;  王建峰;  陈俊;  陈良惠;  种明;  朱建军;  赵德刚;  刘宗顺;  杨辉;  梁骏吾
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AlGaN／GaN异质结紫外探测器 期刊论文
红外与激光工程, 2007, 卷号: 36, 期号: 6, 页码: 917-919
Authors:  陈俊;  许金通;  李雪;  陈亮;  赵德刚;  李向阳
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非故意掺杂n型GaN的负持续光电导现象 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 6, 页码: 878-882
Authors:  苏志国;  许金通;  陈俊;  李向阳;  刘骥;  赵德刚
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Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2006, 卷号: 49, 期号: 6, 页码: 727-732
Authors:  Li DY (Li Deyao);  Zhang SM (Zhang Shuming);  Wang JF (Wang Jianfeng);  Chen J (Chen Jun);  Chen LH (Chen Lianghui);  Chong M (Chong Ming);  Zhu JJ (Zhu Jianjun);  Zhao DG (Zhao Degang);  Liu ZS (Liu Zongshun);  Yang H (Yang Hui);  Liang JW (Liang Junwu);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition (Mocvd)  Gan-hased Laser Diodes  Multiple Quantum Well  Ridge Waveguide  Threshold Current  Electrical-properties  Gan Substrate  Contacts  
GaN 的MOCVD 侧向外延生长研究 学位论文
, 北京: 中国科学院半导体研究所, 2006
Authors:  陈俊
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Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Authors:  Wang JF (Wang Jian-Feng);  Zhang BS (Zhang Bao-Shun);  Zhang JC (Zhang Ji-Cai);  Zhu JJ (Zhu Jian-Jun);  Wang YT (Wang Yu-Tian);  Chen J (Chen Jun);  Liu W (Liu Wei);  Jiang DS (Jiang De-Sheng);  Yao DZ (Yao Duan-Zheng);  Yang H (Yang Hui);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: wlino@semi.ac.cn
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Chemical-vapor-deposition  High-quality Gan  Aln Buffer Layer  Nucleation Layer  Phase Epitaxy  Evolution  Density  Silicon  Stress  Si  
背照式GaN／AlGaN p-i-n紫外探测器的制备与性能 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1036-1039
Authors:  陈亮;  游达;  汤英文;  乔辉;  陈俊;  赵德刚;  张燕;  李向阳;  龚海梅
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