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采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜 期刊论文
光电子·激光, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Authors:  周志文;  贺敬凯;  李成;  余金中
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Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
OPTICS COMMUNICATIONS, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Authors:  Zhou ZW (Zhou Zhiwen);  He JK (He Jingkai);  Wang RC (Wang Ruichun);  Li C (Li Cheng);  Yu JZ (Yu Jinzhong);  Zhou, ZW, Shenzhen Inst Informat & Technol, Dept Elect Commun Technol, Shenzhen 518029, Guangdong, Peoples R China. 电子邮箱地址: zhouzw@sziit.com.cn
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Germanium  Hererojunction  Photodiode  Tensile Strain  
SOI基垂直入射Ge PIN光电探测器的研制 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 11, 页码: 1609-1613
Authors:  周志文;  贺敬凯;  王瑞春;  李成;  余金中
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GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-10-21, 公开日期: 4010
Inventors:  周志强;  郝瑞亭;  汤 宝;  任正伟;  徐应强;  牛智川
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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb  
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 14, 页码: Art. No. 141902
Authors:  Chen YH;  Li C;  Zhou ZW;  Lai HK;  Chen SY;  Ding WC;  Cheng BW;  Yu YD;  Li C Xiamen Univ Dept Phys Semicond Photon Res Ctr Xiamen 361005 Peoples R China. E-mail Address: lich@xmu.edu.cn
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Chemical Vapour Deposition  Elemental Semiconductors  Energy Gap  Germanium  Ge-si Alloys  Photoluminescence  Semiconductor Epitaxial Layers  Semiconductor Quantum Wells  Silicon  Tensile Strength  
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 018101
Authors:  Zhou ZQ;  Xu YQ;  Hao RT;  Tang B;  Ren ZW;  Niu ZC;  Zhou ZQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Surface-morphology  Growth  Superlattices  Heterostructures  Temperature  Detectors  Gaas(100)  Films  Inas  Insb  
Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光 期刊论文
材料科学与工程学报, 2009, 卷号: 27, 期号: 1, 页码: 146-149
Authors:  廖凌宏;  周志文;  李成;  陈松岩;  赖虹凯;  余金中;  王启明
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一种在砷化镓衬底上外延生长锑化镓的方法 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郝瑞亭;  周志强;  任正伟;  徐应强;  牛智川
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