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Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Authors:  Sun JY (Sun Jiayin);  Chen J (Chen Jing);  Wang X (Wang Xi);  Wang JF (Wang Jianfeng);  Liu W (Liu Wei);  Zhu JJ (Zhu Jianjun);  Yang H (Yang Hui);  Sun, JY, No 865,Changning Rd, Shanghai 200050, Peoples R China. 电子邮箱地址: jiayinsun@mail.sim.ac.cn
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Chemical Vapor Deposition  
基于薄膜SOI材料的GaN外延生长应力释放机制 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 4, 页码: 367-370
Authors:  孙佳胤;  陈静;  王曦;  王建峰;  刘卫;  朱建军;  杨辉
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注氮工艺对SIMOX器件电特性的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 835-839
Authors:  张国强;  刘忠立;  李宁;  范楷;  郑中山;  张恩霞;  易万兵;  陈猛;  王曦
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埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响 期刊论文
物理学报, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Authors:  郑中山;  刘忠立;  张国强;  李宁;  范楷;  张恩霞;  易万兵;  陈猛;  王曦
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Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 5, 页码: 862-866
Authors:  Zheng Zhongshan;  Liu Zhongli;  Zhang Guoqiang;  Li Ning;  Li Guohua;  Ma Hongzhi;  Zhang Enxia;  Zhang Zhengxuan;  Wang Xi
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注氮工艺对SOI材料抗辐照性能的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1269-1272
Authors:  张恩霞;  钱聪;  张正选;  王曦;  张国强;  李宁;  郑中山;  刘忠立
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注氮剂量对SIMON材料性能影响的研究 期刊论文
功能材料与器件学报, 2004, 卷号: 10, 期号: 4, 页码: 437-440
Authors:  张思霞;  孙佳胤;  易万兵;  陈静;  金波;  陈猛;  张正选;  张国强;  王曦
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具有复合埋层的新型SIMON材料的制备 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 7, 页码: 814-818
Authors:  易万兵;  陈猛;  张恩霞;  刘相华;  陈静;  董业民;  金波;  刘忠立;  王曦
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不同能量氮氧共注入形成的多层SOI结构 期刊论文
功能材料与器件学报, 2002, 卷号: 8, 期号: 3, 页码: 228-232
Authors:  刘相华;  陈猛;  刘忠立;  王曦
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