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Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 5, 页码: 426-430
Authors:  WANG Ningjuan;  LI Ning;  LIU Zhongli;  ZHANG GuoQiang;  YU Fang;  Zheng Zhongshan;  LI Guohua
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部分耗尽型注氟SIMOX器件的电离辐射效应 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 349-353
Authors:  李宁;  张国强;  刘忠立;  范楷;  郑中山;  林青;  张正选;  林成鲁
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注氮工艺对SIMOX器件电特性的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 835-839
Authors:  张国强;  刘忠立;  李宁;  范楷;  郑中山;  张恩霞;  易万兵;  陈猛;  王曦
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埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响 期刊论文
物理学报, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Authors:  郑中山;  刘忠立;  张国强;  李宁;  范楷;  张恩霞;  易万兵;  陈猛;  王曦
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Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 5, 页码: 862-866
Authors:  Zheng Zhongshan;  Liu Zhongli;  Zhang Guoqiang;  Li Ning;  Li Guohua;  Ma Hongzhi;  Zhang Enxia;  Zhang Zhengxuan;  Wang Xi
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注氮工艺对SOI材料抗辐照性能的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1269-1272
Authors:  张恩霞;  钱聪;  张正选;  王曦;  张国强;  李宁;  郑中山;  刘忠立
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注氮剂量对SIMON材料性能影响的研究 期刊论文
功能材料与器件学报, 2004, 卷号: 10, 期号: 4, 页码: 437-440
Authors:  张思霞;  孙佳胤;  易万兵;  陈静;  金波;  陈猛;  张正选;  张国强;  王曦
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