SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides
Zheng Zhongshan; Liu Zhongli; Zhang Guoqiang; Li Ning; Li Guohua; Ma Hongzhi; Zhang Enxia; Zhang Zhengxuan; Wang Xi
2005
Source Publication半导体学报
Volume26Issue:5Pages:862-866
AbstractIn order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.
metadata_83microelectronics r&d center, institute of semiconductors, chinese academy of sciences;shanghai institute of microsystem and information technology, chinese academy of sciences
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:2033997
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17023
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zheng Zhongshan,Liu Zhongli,Zhang Guoqiang,et al. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. 半导体学报,2005,26(5):862-866.
APA Zheng Zhongshan.,Liu Zhongli.,Zhang Guoqiang.,Li Ning.,Li Guohua.,...&Wang Xi.(2005).Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides.半导体学报,26(5),862-866.
MLA Zheng Zhongshan,et al."Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides".半导体学报 26.5(2005):862-866.
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