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Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文
APPLIED PHYSICS EXPRESS, 2010, 卷号: 3, 期号: 7, 页码: Art. No. 072001
Authors:  Huang ZL (Huang Zengli);  Wang JF (Wang Jianfeng);  Liu ZH (Liu Zhenghui);  Xu K (Xu Ke);  Yang H (Yang Hui);  Cao B (Cao Bing);  Han Q (Han Qin);  Zhang GJ (Zhang Guiju);  Wang CH (Wang Chinhua);  Wang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn
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Light-emitting-diodes  
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Authors:  Sun JY (Sun Jiayin);  Chen J (Chen Jing);  Wang X (Wang Xi);  Wang JF (Wang Jianfeng);  Liu W (Liu Wei);  Zhu JJ (Zhu Jianjun);  Yang H (Yang Hui);  Sun, JY, No 865,Changning Rd, Shanghai 200050, Peoples R China. 电子邮箱地址: jiayinsun@mail.sim.ac.cn
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Chemical Vapor Deposition  
蓝紫光InGaN多量子阱激光器 期刊论文
中国科学. E辑, 技术科学, 2007, 卷号: 37, 期号: 3, 页码: 356-359
Authors:  李德尧;  张书明;  王建峰;  陈俊;  陈良惠;  种明;  朱建军;  赵德刚;  刘宗顺;  杨辉;  梁骏吾
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基于薄膜SOI材料的GaN外延生长应力释放机制 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 4, 页码: 367-370
Authors:  孙佳胤;  陈静;  王曦;  王建峰;  刘卫;  朱建军;  杨辉
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Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2006, 卷号: 49, 期号: 6, 页码: 727-732
Authors:  Li DY (Li Deyao);  Zhang SM (Zhang Shuming);  Wang JF (Wang Jianfeng);  Chen J (Chen Jun);  Chen LH (Chen Lianghui);  Chong M (Chong Ming);  Zhu JJ (Zhu Jianjun);  Zhao DG (Zhao Degang);  Liu ZS (Liu Zongshun);  Yang H (Yang Hui);  Liang JW (Liang Junwu);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition (Mocvd)  Gan-hased Laser Diodes  Multiple Quantum Well  Ridge Waveguide  Threshold Current  Electrical-properties  Gan Substrate  Contacts  
Growth of single crystalline ZnxCd1-xS nanocombs by metallo-organic chemical vapor deposition 期刊论文
CHEMICAL PHYSICS LETTERS, 2006, 卷号: 427, 期号: 4-6, 页码: 371-374
Authors:  Zhai TY (Zhai Tianyou);  Zhang XZ (Zhang Xinzheng);  Yang WS (Yang Wensheng);  Ma Y (Ma Ying);  Wang JF (Wang Jianfeng);  Gu ZJ (Gu Zhanjun);  Yu DP (Yu Dapeng);  Yang H (Yang Hui);  Yao JN (Yao Jiannian);  Yao, JN, Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Key Lab Photochem, Beijing 100080, Peoples R China. E-mail: jnyao@iccas.ac.cn
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Polar Surfaces  Zns Nanowires  Cds  Photoluminescence  Nanostructures  Nanocrystals  Nanobelts  Cdxzn1-xs  Nanosaws  
带有A1N插入层的GaN薄膜的结构及应变研究 期刊论文
原子能科学技术, 2006, 卷号: 40, 期号: 5, 页码: 614-619
Authors:  侯利娜;  姚淑德;  周生强;  赵强;  王坤;  丁志博;  王建峰
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Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 419-424
Authors:  Chen Jun;  Wang Jianfeng;  Wang Hui;  Zhao Degang;  Zhu Jianjun;  Zhang Shuming;  Yang Hui
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Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 645-650
Authors:  Shen Xiaoming;  Wang Yutian;  Wang Jianfeng;  Liu Jianping;  Zhang Jicai;  Guo Liping;  Jia Quanjie;  Jiang Xiaoming;  Hu Zhengfei;  Yang Hui;  Liang Junwu
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In源流量与Ⅲ族流量之比对InGaN/GaN多量子阱性质的影响 期刊论文
物理学报, 2004, 卷号: 53, 期号: 8, 页码: 2467-2471
Authors:  张纪才;  王建峰;  王玉田;  杨辉
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