SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GSMBE原位生长SiGeHBT材料
黄大定; 刘金平; 李建平; 林燕霞; 刘学锋; 李灵霄; 孙殿照; 孔梅影; 林兰英
1999
Source Publication半导体学报
Volume20Issue:12Pages:1049
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家九五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532625
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18853
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
黄大定,刘金平,李建平,等. GSMBE原位生长SiGeHBT材料[J]. 半导体学报,1999,20(12):1049.
APA 黄大定.,刘金平.,李建平.,林燕霞.,刘学锋.,...&林兰英.(1999).GSMBE原位生长SiGeHBT材料.半导体学报,20(12),1049.
MLA 黄大定,et al."GSMBE原位生长SiGeHBT材料".半导体学报 20.12(1999):1049.
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