SEMI OpenIR

Browse/Search Results:  1-4 of 4 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com
Adobe PDF(261Kb)  |  Favorite  |  View/Download:1192/471  |  Submit date:2010/03/08
Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)  
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Authors:  Luo WJ;  Wang XL;  Guo LC;  Mao HL;  Wang CM;  Ran JX;  Li JP;  Li JM;  Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn
Adobe PDF(252Kb)  |  Favorite  |  View/Download:1271/615  |  Submit date:2010/03/08
Gan  Si(111)  Crack  Aln  Mocvd  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:  Wang XY (Wang, Xiaoyan);  Wang XL (Wang, Xiaoliang);  Hu GX (Hu, Guoxin);  Wang BZ (Wang, Baozhu);  Ma ZY (Ma, Zhiyong);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Ran JX (Ran, Junxue);  Li JP (Li, Jianping);  Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
Adobe PDF(325Kb)  |  Favorite  |  View/Download:1105/329  |  Submit date:2010/03/29
Alxga1-xn  
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Authors:  Ran JX;  Wang XL;  Hu GX;  Wang JX;  Li JP;  Wang CM;  Zeng YP;  Li JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: jxran@red.semi.ac.cn
Adobe PDF(150Kb)  |  Favorite  |  View/Download:1866/710  |  Submit date:2010/04/11
Gan  Mg Memory Effect  Redistribution  Algan/gan Hbts  Mocvd  Chemical-vapor-deposition  Heterojunction Bipolar-transistors  Fabrication