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穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  张爽;  赵德刚;  刘宗顺;  朱建军;  张书明;  王玉田;  段俐宏;  刘文宝;  江德生;  杨辉
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Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:  Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H;  Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn;  dgzhao@red.semi.ac.cn
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Surface-morphology  Detectors  Growth  
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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高响应度GaN肖特基势垒紫外探测器的性能与分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 592-596
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  段俐宏;  王海;  史永生;  刘文宝;  张爽;  江德生;  杨辉
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氮化镓肖特基结紫外探测器的异常特性测量 期刊论文
高技术通讯, 2005, 卷号: 15, 期号: 10, 页码: 62-67
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  沈晓明;  段俐宏;  杨辉
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缓冲层生长压力对MOCVD GaN性能的影响 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 1
Authors:  陈俊;  张书明;  张宝顺;  朱建军;  冯淦;  段俐宏;  王玉田;  杨辉;  郑文琛
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GaN基肖特基结构紫外探测器 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 6, 页码: 711-714
Authors:  王俊;  赵德刚;  刘宗顺;  伍墨;  金瑞琴;  李娜;  段俐宏;  张书明;  朱建军;  杨辉
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Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Duan LH;  Wang YT;  Yang H;  Zheng WC;  Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
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Gallium Nitride  Mocvd  In Situ Laser Reflectometry  Chemical-vapor-deposition  In-situ  Sapphire Substrate  Nucleation Layers  Films  
Thermal annealing behaviour of Pt on n-GaN Schottky contacts 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 卷号: 36, 期号: 8, 页码: 1018-1022
Authors:  Wang J;  Zhao DG;  Sun YP;  Duan LH;  Wang YT;  Zhang SM;  Yang H;  Zhou SQ;  Wu MF;  Wang J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Barrier Formation  Diodes  Pd  
氮化镓基蓝、绿光LED中游工艺技术产业化研究 期刊论文
液晶与显示, 2003, 卷号: 18, 期号: 1, 页码: 44-47
Authors:  张书明;  杨辉;  段俐宏;  王海;  李秉成;  王胜国;  吴启保;  章裕中;  胡德进;  张双益
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