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RTD与PHEMT集成的几个关键工艺 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 390-394
Authors:  王建林;  刘忠立;  王良臣;  曾一平;  杨富华;  白云霞
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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GSMBE原位生长SiGeHBT材料 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 12, 页码: 1049
Authors:  黄大定;  刘金平;  李建平;  林燕霞;  刘学锋;  李灵霄;  孙殿照;  孔梅影;  林兰英
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a-Si:H中第二类亚稳缺陷的观察 期刊论文
半导体学报, 1994, 卷号: 15, 期号: 5, 页码: 304
Authors:  孙国胜;  夏传钺;  郑义霞;  孔光临
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