SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
a-Si:H中第二类亚稳缺陷的观察
孙国胜; 夏传钺; 郑义霞; 孔光临
1994
Source Publication半导体学报
Volume15Issue:5Pages:304
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:230103
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20009
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙国胜,夏传钺,郑义霞,等. a-Si:H中第二类亚稳缺陷的观察[J]. 半导体学报,1994,15(5):304.
APA 孙国胜,夏传钺,郑义霞,&孔光临.(1994).a-Si:H中第二类亚稳缺陷的观察.半导体学报,15(5),304.
MLA 孙国胜,et al."a-Si:H中第二类亚稳缺陷的观察".半导体学报 15.5(1994):304.
Files in This Item:
File Name/Size DocType Version Access License
6106.pdf(496KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[孙国胜]'s Articles
[夏传钺]'s Articles
[郑义霞]'s Articles
Baidu academic
Similar articles in Baidu academic
[孙国胜]'s Articles
[夏传钺]'s Articles
[郑义霞]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[孙国胜]'s Articles
[夏传钺]'s Articles
[郑义霞]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.