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16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Chen HD;  Mao LH;  Jun T;  Kun L;  Yun D;  Huang YZ;  Wu RH;  Jun F;  Ke XM;  Liu HY;  Wang Z;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(418Kb)  |  收藏  |  浏览/下载：1737/269  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Surface-emitting Lasers  Vlsi  
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Lu LW;  Ge WK;  Sou IK;  Wang J;  Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB912 Beijing 100083 Peoples R China.
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：1471/306  |  提交时间：2010/10/29
Znste  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1274/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1279/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1249/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films