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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
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浏览/下载:1869/527
  |  
提交时间:2010/03/09
Zinc Oxide
Defect
Vacancy
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
;
Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)
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  |  
浏览/下载:1832/508
  |  
提交时间:2010/03/09
Zinc Oxide
X-ray Diffraction
Defects
Single Crystal
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
;
Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)
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浏览/下载:1649/528
  |  
提交时间:2010/03/29
Aln
Impurities
Donor
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
作者:
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
;
Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
Adobe PDF(210Kb)
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  |  
浏览/下载:1322/262
  |  
提交时间:2010/10/29
Coincidence Doppler Broadening
Defects
Gasb
Positron Annihilation
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
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  |  
浏览/下载:1237/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress
Residual donors in undoped LEC InP
会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:
Zhao YW
;
Sun NF
;
Sun TN
;
Lin LY
;
Wu XW
;
Guo WL
;
Wu X
;
Bi KY
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(231Kb)
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收藏
  |  
浏览/下载:1379/331
  |  
提交时间:2010/10/29
Indium-phosphide
Carbon
Defects
Growth
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
;
Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)
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收藏
  |  
浏览/下载:1579/368
  |  
提交时间:2010/10/29
Er-doped Silica Glass
Sol-gel Process
Photoluminescence
Planar Wave-guides
Molecular-beam Epitaxy
Crystal Silicon
Implanted Si
Luminescence
Electroluminescence
Fabrication
Impurities
Films
Ions
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)
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收藏
  |  
浏览/下载:1313/307
  |  
提交时间:2010/11/15
Stress
Growth
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD
会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:
Wang LS
;
Yue GZ
;
Liu XL
;
Wang XH
;
Wang CX
;
Wang D
;
Lu DC
;
Wang ZG
;
Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:983/0
  |  
提交时间:2010/10/29
Metastability
Antisite
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:
Mo QW
;
Fan TW
;
Gong Q
;
Wu J
;
Wang ZG
;
Bai YQ
;
Zhang W
;
Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)
  |  
收藏
  |  
浏览/下载:1388/316
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Coherent Islands
Gaas
Growth
Dots
Dislocations
Temperature
Mechanisms
Si(001)
Ingaas