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InAs单晶位错和杂质条纹的识别及相关材料性质研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  孙静
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无权访问的条目 学位论文
Authors:  吴卓辉
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Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact 期刊论文
Coatings, 2019, 卷号: 9, 页码: 291
Authors:  Wenjie Wang ;   Wuze Xie ;   Zejia Deng ;   Haojun Yang ;   Mingle Liao ;   Junze Li ;   Xiaojia Luo ;   Song Sun ;   Degang Zhao
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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 5, 页码: 057102
Authors:  Ding Yu ;   Guiying Shen ;   Hui Xie ;   Jingming Liu ;   Jing Sun ;   Youwen Zhao
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InAs单晶原生缺陷、Mn掺杂及相关光电性质研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  沈桂英
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Inas单晶  热退火  离子注入  缺陷复合体  杂质带电导  
无权访问的条目 学位论文
Authors:  綦成林
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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
Authors:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang;  Tobias Schulz;  Martin Albrecht;  Sebastian Metzner;  Mathias Müller;  Olga August;  Frank Bertram;  Jürgen Christen;  Peng Jin;  Mo Li;  Jian Zhang;  Xuelin Yang;  Fujun Xu;  Zhixin Qin;  Weikun Ge;  Bo Shen;  Xinqiang Wang
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Enhancement of below gap transmission of InAs single crystal via suppression of native defects 期刊论文
Materials Research Express, 2017, 卷号: 4, 期号: 3, 页码: 036203
Authors:  Guiying Shen;  Youwen Zhao;  Zhiyuan Dong;  Jingming Liu;  Hui Xie;  Yongbiao Bai;  Xiaoyu Chen
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宽禁带半导体材料光学性质的研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  刘雅丽
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Algan/algan 量子阱  Gan/aln量子点  半导体金刚石  深紫外光致发光  激子-声子作用  激子局域化  
Thermally induced native defect transform in annealed GaSb 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 7, 页码: 077801
Authors:  Jie Su;  Tong Liu;  Jing-Ming Liu;  Jun Yang;  Yong-Biao Bai;  Gui-Ying Shen;  Zhi-Yuan Dong;  Fang-Fang Wang;  You-Wen Zhao
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