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无权访问的条目 学位论文
Authors:  吴卓辉
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InAs单晶原生缺陷、Mn掺杂及相关光电性质研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  沈桂英
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Inas单晶  热退火  离子注入  缺陷复合体  杂质带电导  
无权访问的条目 学位论文
Authors:  綦成林
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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
Authors:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang;  Tobias Schulz;  Martin Albrecht;  Sebastian Metzner;  Mathias Müller;  Olga August;  Frank Bertram;  Jürgen Christen;  Peng Jin;  Mo Li;  Jian Zhang;  Xuelin Yang;  Fujun Xu;  Zhixin Qin;  Weikun Ge;  Bo Shen;  Xinqiang Wang
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Enhancement of below gap transmission of InAs single crystal via suppression of native defects 期刊论文
Materials Research Express, 2017, 卷号: 4, 期号: 3, 页码: 036203
Authors:  Guiying Shen;  Youwen Zhao;  Zhiyuan Dong;  Jingming Liu;  Hui Xie;  Yongbiao Bai;  Xiaoyu Chen
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宽禁带半导体材料光学性质的研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  刘雅丽
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Algan/algan 量子阱  Gan/aln量子点  半导体金刚石  深紫外光致发光  激子-声子作用  激子局域化  
Thermally induced native defect transform in annealed GaSb 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 7, 页码: 077801
Authors:  Jie Su;  Tong Liu;  Jing-Ming Liu;  Jun Yang;  Yong-Biao Bai;  Gui-Ying Shen;  Zhi-Yuan Dong;  Fang-Fang Wang;  You-Wen Zhao
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Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 5, 页码: A320-A327
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Geng, C;  Zheng, HY;  Wei, XC;  Yan, QF;  Li, JM
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75016
Authors:  Li H;  Zhou K;  Pang JB;  Shao YD;  Wang Z;  Zhao YW;  Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
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Undoped Gallium Antimonide  Self-diffusion  Native Defects  N-type  Crystals  Cathodoluminescence  Photoluminescence  Semiconductors  Spectroscopy  Luminescence  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes