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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells
会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:
Shi, MJ
;
Wang, ZG
;
Zhang, C
;
Peng, WB
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
;
Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(134Kb)
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浏览/下载:1556/265
  |  
提交时间:2010/03/09
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
;
Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)
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  |  
浏览/下载:1415/222
  |  
提交时间:2010/03/29
Polycrystalline 3c-sic
Resonator
Doping
Silicon-carbide
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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浏览/下载:1355/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
;
Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)
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浏览/下载:1685/528
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提交时间:2010/03/29
Aln
Impurities
Donor
Study of infrared luminescence from Er-implanted GaN films
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)
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收藏
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浏览/下载:1306/325
  |  
提交时间:2010/11/15
Doping
Metalorganic Chemical Vapor Deposition
Molecular Beam Epitaxy
Gallium Compounds
Semiconducting Gallium Compounds
Erbium
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Sun, GS
;
Ning, J
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)
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收藏
  |  
浏览/下载:1345/208
  |  
提交时间:2010/03/29
4h-sic
Lpcvd Homoepitaxial Growth
Thermal Oxidization
Mos Structures
Hot-wall Cvd
Study on optical band gap of boron-doped nc-Si : H film
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Han HX
;
Ding K
;
Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
Adobe PDF(860Kb)
  |  
收藏
  |  
浏览/下载:1071/213
  |  
提交时间:2010/11/15
Amorphous-silicon
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
;
Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)
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收藏
  |  
浏览/下载:1521/300
  |  
提交时间:2010/11/15
3c-sic
In-situ Doping
Low-pressure Cvd
Sapphire Substrate
Chemical-vapor-deposition
Competition Epitaxy
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
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收藏
  |  
浏览/下载:1151/261
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
;
Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)
  |  
收藏
  |  
浏览/下载:1249/251
  |  
提交时间:2010/11/15
Er-doped Silicon
Photoluminescence
Energy Transfer
Al2o3 Wave-guides
Er
Electroluminescence
Epitaxy
Gaas