Study on optical band gap of boron-doped nc-Si : H film

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	Study on optical band gap of boron-doped nc-Si : H film
	Wei WS; Wang TM; Zhang CX; Li GH; Han HX; Ding K; Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
	2002
会议名称	Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码	4327-4330
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	beijing univ aeronaut & astronaut, sch sci, ctr mat phys & chem, beijing 100083, peoples r china; beijing univ aeronaut & astronaut, inst opt elect, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab semicond superlattice & microstruct, beijing 100083, peoples r china
摘要	The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.
关键词	Amorphous-silicon
学科领域	半导体材料
主办者	Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14877
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wei WS,Wang TM,Zhang CX,et al. Study on optical band gap of boron-doped nc-Si : H film[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4327-4330.

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