The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells
	Shi, MJ; Wang, ZG; Zhang, C; Peng, WB; Zeng, XB; Diao, HW; Kong, GL; Liao, XB; Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2007
会议名称	Solar World Congress of the International-Solar-Energy-Society
会议录名称	PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007
页码	SOLAR ENERGY AND HUMAN SETTLEMENT VOLS I-V: 1210-1214
会议日期	SEP 18-21, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	TSINGHUA UNIVERSITY HAIDIANQU, BEIJING 100084, PEOPLES R CHINA
出版者	TSINGHUA UNIVERSITY PRESS
ISBN	978-7-302-16146-2
部门归属	[shi mingji; wang zhanguo; zhang changsha; peng wenbo; zeng xiangbo; diao hongwei; kong guanglin; liao xianbo] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.
学科领域	半导体材料
主办者	Int Solar Energy Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7868
专题	中国科学院半导体研究所（2009年前）
通讯作者	Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Shi, MJ,Wang, ZG,Zhang, C,et al. The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells[C]. TSINGHUA UNIVERSITY HAIDIANQU, BEIJING 100084, PEOPLES R CHINA:TSINGHUA UNIVERSITY PRESS,2007:SOLAR ENERGY AND HUMAN SETTLEMENT VOLS I-V: 1210-1214.

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