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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [10]
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江德生 [1]
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会议论文 [10]
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2001 [10]
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发表日期:2001
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Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
;
Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
  |  
收藏
  |  
浏览/下载:1426/297
  |  
提交时间:2010/10/29
Ge/si Islands
Quantum Dot
Band Alignment
Pl
Si/si1-xgex Quantum-wells
Stranski-krastanov Growth
Ii Band Alignment
Ge Islands
Temperature-dependence
Photoluminescence
Layers
Luminescence
Organization
Mechanism
Integrated MMI optical couplers and optical switches in Silicon-on-insulator technology
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTICAL SWITCHING AND OPTICAL INTERCONNECTION, 4582, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Yu JH
;
Wei HZ
;
Zhang XF
;
Yan QF
;
Xia JS
;
Yu JH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(328Kb)
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收藏
  |  
浏览/下载:1405/440
  |  
提交时间:2010/10/29
Soi
Multimode Interference
Optical Coupler
Optical Switch
Integrated Optics
Multimode Interference Couplers
Power Splitters
Devices
Design
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1097/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Wang QM
;
Li C
;
Yang QQ
;
Liu YL
;
Zhu YQ
;
Cheng BW
;
Yu JZ
;
Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(254Kb)
  |  
收藏
  |  
浏览/下载:1390/298
  |  
提交时间:2010/10/29
Long-wavelength
Si
Waveguide
Resonant-cavity-enhanced Photodetector
And Optical Communication
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
  |  
收藏
  |  
浏览/下载:1767/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering
会议论文
CHINESE PHYSICS, 10, BEIJING, PEOPLES R CHINA, OCT 30-NOV 02, 2000
作者:
Liu JW
;
Xie FQ
;
Zhong DY
;
Wang EG
;
Liu WX
;
Li SF
;
Yang H
;
Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
收藏
  |  
浏览/下载:915/0
  |  
提交时间:2010/11/15
Luminescence
Sic
Nanocrystalline Film
Rf Sputtering
Raman-scattering
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
;
Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)
  |  
收藏
  |  
浏览/下载:1312/315
  |  
提交时间:2010/11/15
Poly-si
Structure
Hot-wire
Plasma-enhanced Chemical Vapor Deposition (Pecvd)
Chemical-vapor-deposition
Microcrystalline Silicon
Hydrogen
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
;
Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)
  |  
收藏
  |  
浏览/下载:1278/247
  |  
提交时间:2010/11/15
X-ray Diffraction
Molecular Beam Epitaxy
Semiconducting Silicon Compounds
Low-temperature Growth
Films
Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers
会议论文
DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2, 194-1, PARIS, FRANCE, JUL 17-21, 2000
作者:
Wang WK
;
Zhao JH
;
Wang WK Chinese Acad Sci Inst Phys POB 60334 Beijing 100080 Peoples R China.
Adobe PDF(237Kb)
  |  
收藏
  |  
浏览/下载:885/144
  |  
提交时间:2010/11/15
Convection-less Condition
Liquid Metal Diffusion
Solid/liquid-liquid/solid Trilayer
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
  |  
收藏
  |  
浏览/下载:1169/261
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn