Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering
Liu JW; Xie FQ; Zhong DY; Wang EG; Liu WX; Li SF; Yang H; Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
2001
会议名称Chinese-German Workshop on Characterization and Development on Nanosystems
会议录名称CHINESE PHYSICS, 10
页码S36-S39
会议日期OCT 30-NOV 02, 2000
会议地点BEIJING, PEOPLES R CHINA
出版地P O BOX 603, BEIJING 100080, PEOPLES R CHINA
出版者CHINESE PHYSICAL SOC
ISSN1009-1963
部门归属chinese acad sci, inst phys, state key lab surface phys, beijing 100080, peoples r china; tianjin univ, sch mat sci & engn, tianjin 300072, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
摘要Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.
关键词Luminescence Sic Nanocrystalline Film Rf Sputtering Raman-scattering
学科领域半导体材料
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14925
专题中国科学院半导体研究所(2009年前)
通讯作者Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
推荐引用方式
GB/T 7714
Liu JW,Xie FQ,Zhong DY,et al. Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering[C]. P O BOX 603, BEIJING 100080, PEOPLES R CHINA:CHINESE PHYSICAL SOC,2001:S36-S39.
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