Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
	Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y; Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
	2001
会议名称	1st International Conference on Cat-CVD (Hot Wire CVD) Process
会议录名称	THIN SOLID FILMS, 395 (1-2)
页码	213-216
会议日期	NOV 14-17, 2000
会议地点	KANAZAWA, JAPAN
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, grad sch, dept phys, beijing 100039, peoples r china; chinese acad sci, lab semicond mat sci, beijing 100039, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100084, peoples r china
摘要	Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	Poly-si Structure Hot-wire Plasma-enhanced Chemical Vapor Deposition (Pecvd) Chemical-vapor-deposition Microcrystalline Silicon Hydrogen
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14921
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
推荐引用方式 GB/T 7714	Feng Y,Zhu M,Liu F,et al. Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2001:213-216.

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