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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1935/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2973/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Feng, W (Feng, W.);  Pan, JQ (Pan, J. Q.);  Zhou, F (Zhou, F.);  Zhao, LJ (Zhao, L. J.);  Zhu, HL (Zhu, H. L.);  Wang, W (Wang, W.);  Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)  |  收藏  |  浏览/下载：1289/295  |  提交时间：2010/03/29
Buried-heterostructure Lasers  Bandgap Energy Control  Vapor-phase Epitaxy  Pressure Movpe  Converter  
Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Hou LP;  Zhu HL;  Zhou F;  Wang BJ;  Bian J;  Wang W;  Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: houlp@red.semi.ac.cn
Adobe PDF(205Kb)  |  收藏  |  浏览/下载：1448/258  |  提交时间：2010/03/29
Asymmetric Twin Waveguide  
Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Sun, GS;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)  |  收藏  |  浏览/下载：1409/293  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:  Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ;  Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)  |  收藏  |  浏览/下载：1070/178  |  提交时间：2010/11/15
Bi2ti2o7  Thin Film  Mocvd  (111) Orientation  Chemical-vapor-deposition  Crystal Thin-films  
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:  Sun GS;  Luo MC;  Wang L;  Zhu SR;  Li JM;  Zeng YP;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)  |  收藏  |  浏览/下载：1549/300  |  提交时间：2010/11/15
3c-sic  In-situ Doping  Low-pressure Cvd  Sapphire Substrate  Chemical-vapor-deposition  Competition Epitaxy  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1245/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1439/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:  Feng Y;  Zhu M;  Liu F;  Liu J;  Han H;  Han Y;  Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：1308/315  |  提交时间：2010/11/15
Poly-si  Structure  Hot-wire  Plasma-enhanced Chemical Vapor Deposition (Pecvd)  Chemical-vapor-deposition  Microcrystalline Silicon  Hydrogen