Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.); Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2006
会议名称12th International Conference on Indium Phosphide and Related Materials
会议录名称2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
页码306-309
会议日期MAY 07-11, 2006
会议地点Princeton, NJ
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-0-7803-9557-2
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).
关键词Buried-heterostructure Lasers Bandgap Energy Control Vapor-phase Epitaxy Pressure Movpe Converter
学科领域光电子学
主办者IEEE. Princeton Univ
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9786
专题中国科学院半导体研究所(2009年前)
通讯作者Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Feng, W ,Pan, JQ ,Zhou, F ,et al. Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:306-309.
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