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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Single-slope ADCs
会议论文
Proceedings of SPIE 卷: 8194 文献号: 819433, Beijing, PEOPLES R CHINA, 2011
作者:
Li QL (Li Quanliang)
;
Shi C (Shi Cong)
;
Wu NJ (Wu Nanjian)
Adobe PDF(482Kb)
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浏览/下载:8932/3325
  |  
提交时间:2011/12/13
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Tang J
;
Wang XL
;
Chen TS
;
Xiao HL
;
Ran JX
;
Zhang ML
;
Hu GX
;
Feng C
;
Hou QF
;
Wei M
;
Li JM
;
Wang ZG
;
Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)
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浏览/下载:1874/433
  |  
提交时间:2010/03/09
Algan/gan Hemts
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:2026/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)
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  |  
浏览/下载:1769/523
  |  
提交时间:2010/03/09
Hydrogen Sensor
Algan/gan Heterostructure
Schottky Diode
Kinetic Monte Carlo simulation of semiconductor quantum dot growth
会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:
Zhao C
;
Chen YH
;
Sun J
;
Lei W
;
Cui CX
;
Yu LK
;
Li K
;
Wang ZG
;
Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)
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  |  
浏览/下载:1731/327
  |  
提交时间:2010/03/29
Monte Carlo Simulation
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J
会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:
Shou-Li Z
;
De-Ping X
;
Ya-Li I
;
Hai-Lin C
;
Yin-Zhe C
;
Ang M
;
Ji-He L
;
Jun-Hua G
;
Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)
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浏览/下载:1645/301
  |  
提交时间:2010/03/09
Rce- P-i-n-pd
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)
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  |  
浏览/下载:1468/197
  |  
提交时间:2010/03/29
Micro-raman
4h-sic
Defects
3c-inclusions
Triangle-shaped Inclusion
Epitaxial Layers
Silicon-carbide
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)
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收藏
  |  
浏览/下载:1262/198
  |  
提交时间:2010/03/29
Homoepitaxy
4h-sic
Multi-epilayer
Uv Detection
p(+)-pi-n(-)
Ultraviolet Photodetector
Epitaxial-growth
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)
  |  
收藏
  |  
浏览/下载:1399/273
  |  
提交时间:2010/03/29
Avalanche Photodiodes
Area
Deep levels in high resistivity GaN epilayers grown by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Fang, CB
;
Wang, XL
;
Wang, JX
;
Liu, C
;
Wang, CM
;
Hu, GX
;
Li, JP
;
Li, CJ
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)
  |  
收藏
  |  
浏览/下载:1499/262
  |  
提交时间:2010/03/29
Thermally Stimulated Current
Gallium Nitride
Defects