SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-9 of 9 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Light-splitting photovoltaic system utilizing two dual-junction solar cells 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:  Xiong KL;  Lu SL;  Dong JR;  Zhou TF;  Jiang DS;  Wang RX;  Yang H;  Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
Adobe PDF(681Kb)  |  Favorite  |  View/Download:1265/436  |  Submit date:2011/07/05
Light Splitting  Gainp/gaas  Gainasp/ingaas  Dual Junction  
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(853Kb)  |  Favorite  |  View/Download:1155/230  |  Submit date:2011/07/05
Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
高阻氮化镓外延层的异常光吸收 期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  刘文宝;  赵德刚;  江德生;  刘宗顺;  朱建军;  张书明;  杨辉
Adobe PDF(685Kb)  |  Favorite  |  View/Download:843/161  |  Submit date:2011/08/16
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(319Kb)  |  Favorite  |  View/Download:1195/307  |  Submit date:2010/04/13
Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响 期刊论文
物理学报, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  邓懿;  赵德刚;  吴亮亮;  刘宗顺;  朱建军;  江德生;  张书明;  梁骏吾
Adobe PDF(853Kb)  |  Favorite  |  View/Download:1360/317  |  Submit date:2011/08/16
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)  |  Favorite  |  View/Download:1361/361  |  Submit date:2010/04/05
Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)  |  Favorite  |  View/Download:1718/452  |  Submit date:2010/04/04
Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
Adobe PDF(283Kb)  |  Favorite  |  View/Download:1382/315  |  Submit date:2011/07/05
Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 12, 页码: Art. No. 125314
Authors:  Jahn U;  Brandt O;  Luna E;  Sun X;  Wang H;  Jiang DS;  Bian LF;  Yang;  H;  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
Adobe PDF(660Kb)  |  Favorite  |  View/Download:1286/316  |  Submit date:2010/04/28
Gan  Alloys