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高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长 期刊论文
物理学报, 2015, 卷号: 64, 期号: 7, 页码: 077501
Authors:  祝梦遥;  鲁军;  马佳淋;  李利霞;  王海龙;  潘东;  赵建华
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Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm 期刊论文
NANO LETTERS, 2014, 卷号: 14, 期号: 3, 页码: 1214-1220
Authors:  Pan, D;  Fu, MQ;  Yu, XZ;  Wang, XL;  Zhu, LJ;  Nie, SH;  Wang, SL;  Chen, Q;  Xiong, P;  von Molnar, S;  Zhao, JH
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Anomalous Hall effect in epitaxial L1-Mn1.5Ga films with variable chemical ordering 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 89, 期号: 22, 页码: 220406
Authors:  Zhu, LJ;  Pan, D;  Zhao, JH
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Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 253902
Authors:  Hong, M;  Yuan, GD;  Peng, Y;  Li, JM;  Chen, HY;  Zhang, Y;  Liu, ZQ;  Wang, JX;  Cai, B;  Zhu, YM;  Chen, Y;  Liu, JH
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Multifunctional L1(0)-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product 期刊论文
ADVANCED MATERIALS, 2012, 卷号: 24, 期号: 33, 页码: 4547-4551
Authors:  Zhu LJ (Zhu, Lijun);  Nie SH (Nie, Shuaihua);  Meng KK (Meng, Kangkang);  Pan D (Pan, Dong);  Zhao JH (Zhao, Jianhua);  Zheng HZ (Zheng, Houzhi)
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Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 3, 页码: 35008
Authors:  Zheng, CC;  Xu, SJ;  Ning, JQ;  Bao, W;  Wang, JF;  Gao, J;  Liu, JM;  Zhu, JH;  Liu, XL
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Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
SOLID STATE COMMUNICATIONS, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Authors:  Wu H;  Gan HD;  Zheng HZ;  Lu J;  Zhu H;  Ji Y;  Li GR;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hdgan@riec.tohoku.ac.jp;  hzzheng@red.semi.ac.cn
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Magnetic Semiconductors  Molecular Beam Epitaxy  Magneto-optical Effects  Transport-properties  Semiconductor  (Ga  Cr)As  
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93507
Authors:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
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Gallium-arsenide  Semiconductors  Field  
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 100301
Authors:  Wang, LG;  Shen, C;  Zheng, HZ;  Zhu, H;  Zhao, JH;  Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn
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Charged Acceptor Centre  Screening Effect  Exchange Interaction  Shallow Acceptor States  Gallium-arsenide  Semiconductors  Field  
External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Authors:  Li WW (Li W. W.);  Zhu JJ (Zhu J. J.);  Liang JR (Liang J. R.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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