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Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 51, 期号: 1,Part 1, 页码: 15501
Authors:  He, W;  Lu, SL;  Dong, JR;  Zhao, YM;  Yang, H
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含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作 期刊论文
科学通报, 2011, 卷号: 56, 期号: 2, 页码: 174-178
Authors:  唐龙娟;  郑新和;  张东炎;  董建荣;  王辉;  杨辉
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Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Effective recombination velocity of textured surfaces 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 19, 页码: Art. No. 193107
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Jiang DS (Jiang Desheng);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Carrier Lifetime  Numerical Analysis  Semiconductor Thin Films  Surface Recombination  Surface Texture  
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:  Xiong KL (Xiong Kanglin);  He W (He Wei);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Resistance  Reciprocity  Diode  
Light-splitting photovoltaic system utilizing two dual-junction solar cells 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:  Xiong KL;  Lu SL;  Dong JR;  Zhou TF;  Jiang DS;  Wang RX;  Yang H;  Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
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Light Splitting  Gainp/gaas  Gainasp/ingaas  Dual Junction  
Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films 期刊论文
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2010, 卷号: 30, 期号: 4, 页码: 1002-1007
Authors:  Liang JR (Liang Ji-ran);  Hu M (Hu Ming);  Wang XD (Wang Xiao-dong);  Li GK (Li Gui-ke);  Kan Q (Kan Qiang);  Ji A (Ji An);  Yang FH (Yang Fu-hua);  Liu J (Liu Jian);  Wu NJ (Wu Nan-jian);  Chen HD (Chen Hong-da);  Liang, JR, Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China. 电子邮箱地址: liang_jiran@tju.edu.cn
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Nano Vo2 Thin Films  
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 10, 页码: Art.No.100206
Authors:  Lu SL (Lu, Shulong);  Nosho H (Nosho, Hidetaka);  Tackeuchi A (Tackeuchi, Atsushi);  Bian LF (Bian, Lifeng);  Dong JR (Dong, Jianrong);  Niu ZC (Niu, Zhichuan);  Lu, SL, Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan. 电子邮箱地址: sllu2008@sinano.ac.cn
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Alloys  
Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 83, 期号: 12, 页码: 7900-7902
Authors:  Li XB;  Sun DZ;  Dong JR;  Li JP;  Kong MY;  Yoon SF;  Li XB,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Heterostructures  Superlattices  
Growth and transport properties of InAs thin films on GaAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 191, 期号: 3, 页码: 361-364
Authors:  Zhou HW;  Zeng YP;  Wang HM;  Dong JR;  Zhu ZP;  Pan L;  Kong MY;  Zhou HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Epilayers  Mbe