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AlGaN/GaN异质结探测器研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  邓懿
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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 127306
Authors:  Le LC (Le Ling-Cong);  Zhao DG (Zhao De-Gang);  Wu LL (Wu Liang-Liang);  Deng Y (Deng Yi);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Zhang BS (Zhang Bao-Shun);  Yang H (Yang Hui)
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响 期刊论文
物理学报, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  邓懿;  赵德刚;  吴亮亮;  刘宗顺;  朱建军;  江德生;  张书明;  梁骏吾
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氮化镓基紫外-红外双色探测器及制作方法 专利
专利类型: 发明, 专利号: CN201010034282.9, 公开日期: 2011-08-30
Inventors:  邓懿;  赵德刚
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