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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures
期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:
Wang, JM
;
Xu, FJ
;
Zhang, X
;
An, W
;
Li, XZ
;
Song, J
;
Ge, WK
;
Tian, GS
;
Lu, J
;
Wang, XQ
;
Tang, N
;
Yang, ZJ
;
Li, W
;
Wang, WY
;
Jin, P
;
Chen, YH
;
Shen, B
Adobe PDF(738Kb)
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Submit date:2015/03/20
Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid
期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 4889
Authors:
Duan, JX
;
Tang, N
;
He, X
;
Shen, B
;
Yan, Y
;
Zhang, S
;
Qin, XD
;
Wang, XQ
;
Yang, XL
;
Xu, FJ
;
Chen, YH
;
Ge, WK
Adobe PDF(855Kb)
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View/Download:337/72
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Submit date:2015/04/02
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition
期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:
Wang JM (Wang, Jiaming)
;
Xu FJ (Xu, Fujun)
;
Huang CC (Huang, Chengcheng)
;
Xu ZY (Xu, Zhengyu)
;
Zhang X (Zhang, Xia)
;
Wang Y (Wang, Yan)
;
Ge WK (Ge, Weikun)
;
Wang XQ (Wang, Xinqiang)
;
Yang ZJ (Yang, Zhijian)
;
Shen B (Shen, Bo)
;
Li W (Li, Wei)
;
Wang WY (Wang, Weiying)
;
Jin P (Jin, Peng)
Adobe PDF(2514Kb)
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View/Download:716/227
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Submit date:2013/03/27
Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition
期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:
Sang, L
;
Liu, JM
;
Xu, XQ
;
Wang, J
;
Zhao, GJ
;
Liu, CB
;
Gu, CY
;
Liu, GP
;
Wei, HY
;
Liu, XL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
Adobe PDF(4053Kb)
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View/Download:775/202
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Submit date:2013/03/17
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:
Li, ZW
;
Wei, HY
;
Xu, XQ
;
Zhao, GJ
;
Liu, XL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
Adobe PDF(863Kb)
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View/Download:734/245
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Submit date:2013/03/17
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:
Li, ZW
;
Wei, HY
;
Xu, XQ
;
Zhao, GJ
;
Liu, XL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
Adobe PDF(863Kb)
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View/Download:791/268
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Submit date:2013/03/17
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:
Liu JM
;
Liu XL
;
Li CM
;
Wei HY
;
Guo Y
;
Jiao CM
;
Li ZW
;
Xu XQ
;
Song HP
;
Yang SY
;
Zhu QS
;
Wang ZG
;
Yang AL
;
Yang TY
;
Wang HH
;
Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn
;
xlliu@semi.ac.cn
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View/Download:1247/335
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Submit date:2011/07/05
Cathodoluminescence Characterization
Gallium Nitride
Stresses
Layers
Heterostructure
Deposition
Constants
Mechanism
Sapphire
Strain
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:
Shi K
;
Li DB
;
Song HP
;
Guo Y
;
Wang J
;
Xu XQ
;
Liu JM
;
Yang AL
;
Wei HY
;
Zhang B
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
;
Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn
;
lidb@ciomp.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(343Kb)
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View/Download:1815/418
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Submit date:2011/07/05
Chemical-vapor-deposition
Core-level Photoemission
Sb-doped Sno2
Inn
Growth
Gan
Naxwo3
Alloys
Green
State
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:
Zhang BA
;
Song HP
;
Xu XQ
;
Liu JM
;
Wang J
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
;
Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
;
xlliu@semi.ac.cn
;
qszhu@semi.ac.cn
Adobe PDF(1062Kb)
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View/Download:1361/425
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Submit date:2011/07/05
Chemical-vapor-deposition
Semiconductor Nanowires
Nitride Nanotubes
Gan
Emission
Mechanism
基于柔性衬底的GaN薄膜生长及相关物性研究
学位论文
, 北京: 中国科学院研究生院, 2011
Authors:
徐小青
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View/Download:848/132
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Submit date:2011/06/01