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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:  Wang, JM;  Xu, FJ;  Zhang, X;  An, W;  Li, XZ;  Song, J;  Ge, WK;  Tian, GS;  Lu, J;  Wang, XQ;  Tang, N;  Yang, ZJ;  Li, W;  Wang, WY;  Jin, P;  Chen, YH;  Shen, B
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Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 4889
Authors:  Duan, JX;  Tang, N;  He, X;  Shen, B;  Yan, Y;  Zhang, S;  Qin, XD;  Wang, XQ;  Yang, XL;  Xu, FJ;  Chen, YH;  Ge, WK
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Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:  Wang JM (Wang, Jiaming);  Xu FJ (Xu, Fujun);  Huang CC (Huang, Chengcheng);  Xu ZY (Xu, Zhengyu);  Zhang X (Zhang, Xia);  Wang Y (Wang, Yan);  Ge WK (Ge, Weikun);  Wang XQ (Wang, Xinqiang);  Yang ZJ (Yang, Zhijian);  Shen B (Shen, Bo);  Li W (Li, Wei);  Wang WY (Wang, Weiying);  Jin P (Jin, Peng)
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Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:  Sang, L;  Liu, JM;  Xu, XQ;  Wang, J;  Zhao, GJ;  Liu, CB;  Gu, CY;  Liu, GP;  Wei, HY;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:  Zhang BA;  Song HP;  Xu XQ;  Liu JM;  Wang J;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Semiconductor Nanowires  Nitride Nanotubes  Gan  Emission  Mechanism  
基于柔性衬底的GaN薄膜生长及相关物性研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  徐小青
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