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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
Authors:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang;  Tobias Schulz;  Martin Albrecht;  Sebastian Metzner;  Mathias Müller;  Olga August;  Frank Bertram;  Jürgen Christen;  Peng Jin;  Mo Li;  Jian Zhang;  Xuelin Yang;  Fujun Xu;  Zhixin Qin;  Weikun Ge;  Bo Shen;  Xinqiang Wang
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Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy 期刊论文
Superlattices and Microstructures, 2016, 卷号: 93, 页码: 27-31
Authors:  Xin Rong;  Xinqiang Wang;  Guang Chen;  Jianhai Pan;  Ping Wang;  Huapeng Liu;  Fujun Xu;  Pingheng Tan;  Bo Shen
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High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure 期刊论文
Adv Mater, 2016, 卷号: 28, 期号: 36, 页码: 7978-7983
Authors:  Xin Rong;  Xinqiang Wang;  Sergey V. Ivanov;  Xinhe Jiang;  Guang Chen;  Ping Wang;  Weiying Wang;  Chenguang He;  Tao Wang;  Tobias Schulz;  Martin Albrecht;  Valentin N. Jmerik;  Alexey A. Toropov;  Viacheslav V. Ratnikov;  Vladimir I. Kozlovsky;  Victor P. Martovitsky;  Peng Jin;  Fujun Xu;  Xuelin Yang;  Zhixin Qin;  Weikun Ge;  Junjie Shi;  and Bo Shen
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Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN 期刊论文
Nano Letters, 2013, 卷号: 13, 期号: 5, 页码: 2024–2029
Authors:  Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen
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Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:  Wang JM (Wang, Jiaming);  Xu FJ (Xu, Fujun);  Huang CC (Huang, Chengcheng);  Xu ZY (Xu, Zhengyu);  Zhang X (Zhang, Xia);  Wang Y (Wang, Yan);  Ge WK (Ge, Weikun);  Wang XQ (Wang, Xinqiang);  Yang ZJ (Yang, Zhijian);  Shen B (Shen, Bo);  Li W (Li, Wei);  Wang WY (Wang, Weiying);  Jin P (Jin, Peng)
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Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 18, 页码: Art. No. 181904
Authors:  Yin CM (Yin Chunming);  Shen B (Shen Bo);  Zhang Q (Zhang Qi);  Xu FJ (Xu Fujun);  Tang N (Tang Ning);  Cen LB (Cen Longbin);  Wang XQ (Wang Xinqiang);  Chen YH (Chen Yonghai);  Yu JL (Yu Jinling)
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