SEMI OpenIR  > 中科院半导体材料科学重点实验室
Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition
Sang, L; Liu, JM; Xu, XQ; Wang, J; Zhao, GJ; Liu, CB; Gu, CY; Liu, GP; Wei, HY; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:2Pages:26801
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23714
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Sang, L,Liu, JM,Xu, XQ,et al. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2012,29(2):26801.
APA Sang, L.,Liu, JM.,Xu, XQ.,Wang, J.,Zhao, GJ.,...&Wang, ZG.(2012).Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,29(2),26801.
MLA Sang, L,et al."Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 29.2(2012):26801.
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