SEMI OpenIR  > 中科院半导体材料科学重点实验室
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures
Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B
2014
Source PublicationSCIENTIFIC REPORTS
Volume4Pages:6521
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26115
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, JM,Xu, FJ,Zhang, X,et al. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures[J]. SCIENTIFIC REPORTS,2014,4:6521.
APA Wang, JM.,Xu, FJ.,Zhang, X.,An, W.,Li, XZ.,...&Shen, B.(2014).Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures.SCIENTIFIC REPORTS,4,6521.
MLA Wang, JM,et al."Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures".SCIENTIFIC REPORTS 4(2014):6521.
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