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Ⅲ族氮化物材料 MOCVD 反应室的优化设计 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  谷承艳
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Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:  Sang, L;  Liu, JM;  Xu, XQ;  Wang, J;  Zhao, GJ;  Liu, CB;  Gu, CY;  Liu, GP;  Wei, HY;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu CY (Gu Cheng-Yan);  Liu GP (Liu Gui-Peng);  Shi K (Shi Kai);  Song YF (Song Ya-Feng);  Li CM (Li Cheng-Ming);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Influence of electron irradiation on hydrothermally grown zinc oxide single crystals 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 卷号: 23, 期号: 9, 页码: Art. No. 095028
Authors:  Lu LW;  So CK;  Zhu CY;  Gu QL;  Li CJ;  Fung S;  Brauer G;  Anwand W;  Skorupa W;  Ling CC;  Lu, LW, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: ccling@hku.hk
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一种生长富In组分非极性A面InGaN薄膜的方法 专利
专利类型: 发明, 公开日期: 2012-12-12
Inventors:  赵桂娟;  李志伟;  桑玲;  刘贵鹏;  刘长波;  谷承艳;  魏鸿源;  刘祥林;  朱勤生;  杨少延;  王占国
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