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在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  王鹏飞;  吴东海;  吴兵朋;  熊永华;  詹 峰;  黄社松;  倪海桥;  牛智川
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Tuning photoluminescence of single InAs quantum dot by electric field 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 6, 页码: 4279-4282
Authors:  Chang XY (Chang Xiu-Ying);  Dou XM (Dou Xiu-Ming);  Sun BQ (Sun Bao-Quan);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Single Inas Quantum Dot  Stark Effect  Electron-hole Separation  
Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文
EPL, 2010, 卷号: 90, 期号: 3, 页码: Art. No. 37004
Authors:  Gong M (Gong Ming);  Chen G (Chen Geng);  He LX (He Lixin);  Li CF (Li Chuan-Feng);  Tang JS (Tang Jian-Shun);  Sun FW (Sun Fang-Wen);  Niu ZC (Niu Zhi-Chuan);  Huang SS (Huang She-Song);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Guo GC (Guo Guang-Can);  Gong, M, Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China. 电子邮箱地址: helx@ustc.edu.cn;  cfli@ustc.edu.cn
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Phonon Coupling Regime  
电场调谐InAs单量子点的发光光谱 期刊论文
物理学报, 2010, 卷号: 59, 期号: 6, 页码: 4279-4282
Authors:  常秀英;  窦秀明;  孙宝权;  熊永华;  倪海桥;  牛智川
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半导体InAs量子点单光子发射器件 期刊论文
物理, 2010, 卷号: 39, 期号: 11, 页码: 737-745
Authors:  牛智川;  孙宝权;  窦秀明;  熊永华;  王海莉;  倪海桥;  李树深;  夏建白
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Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107801
Authors:  Wang HL (Wang Hai-Li);  Xiong YH (Xiong Yong-Hua);  Huang SS (Huang She-Song);  Ni HQ (Ni Hai-Qiao);  He ZH (He Zhen-Hong);  Dou XM (Dou Xiu-Ming);  Niu ZC (Niu Zhi-Chuan);  Wang, HL, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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1.3 Mu-m  
Spin Relaxation of Electrons in Single InAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 11, 页码: Art.No.117201
Authors:  Ma SS (Ma Shan-Shan);  Dou XM (Dou Xiu-Ming);  Chang XY (Chang Xiu-Ying);  Sun BQ (Sun Bao-Quan);  Xiong YH (Xiong Yong-Hua);  Niu ZC (Niu Zhi-Chuan);  Ni HQ (Ni Hai-Qiao);  Ma, SS, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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InAs量子点单光子发射器件研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  熊永华
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砷化镓基1.5微米量子阱结构及其外延生长方法 专利
专利类型: 发明, 申请日期: 2007-04-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  倪海桥;  韩勤;  张石勇;  吴东海;  赵欢;  杨晓红;  彭红玲;  周志强;  熊永华;  吴荣汉
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Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 12, 页码: 3376-3379
Authors:  Yang XH (Yang Xiao-Hong);  Han Q (Han Qin);  Ni HQ (Ni Hai-Qiao);  Huang SS (Huang She-Song);  Du Y (Du Yun);  Peng HL (Peng Hong-Ling);  Xiong YH (Xiong Yong-Hua);  Niu ZC (Niu Zhi-Chuan);  Wu RH (Wu Rong-Han);  Yang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: xhyang@red.semi.ac.cn
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