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在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  王鹏飞;  吴东海;  吴兵朋;  熊永华;  詹 峰;  黄社松;  倪海桥;  牛智川
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Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文
EPL, 2010, 卷号: 90, 期号: 3, 页码: Art. No. 37004
Authors:  Gong M (Gong Ming);  Chen G (Chen Geng);  He LX (He Lixin);  Li CF (Li Chuan-Feng);  Tang JS (Tang Jian-Shun);  Sun FW (Sun Fang-Wen);  Niu ZC (Niu Zhi-Chuan);  Huang SS (Huang She-Song);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Guo GC (Guo Guang-Can);  Gong, M, Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China. 电子邮箱地址: helx@ustc.edu.cn;  cfli@ustc.edu.cn
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Phonon Coupling Regime  
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107801
Authors:  Wang HL (Wang Hai-Li);  Xiong YH (Xiong Yong-Hua);  Huang SS (Huang She-Song);  Ni HQ (Ni Hai-Qiao);  He ZH (He Zhen-Hong);  Dou XM (Dou Xiu-Ming);  Niu ZC (Niu Zhi-Chuan);  Wang, HL, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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1.3 Mu-m  
可用于弱光探测器的量子线研究进展 期刊论文
半导体光电, 2009, 卷号: 30, 期号: 1, 页码: 11-15
Authors:  鞠研玲;  杨晓红;  韩勤;  杜云;  倪海桥;  黄社松;  王鹏飞;  贺继方;  牛智川
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单光子源低密度长波长InAs/GaAs量子点的制备 期刊论文
功能材料与器件学报, 2008, 卷号: 14, 期号: 5, 页码: 915-918
Authors:  方志丹;  崔碧峰;  黄社松;  倪海桥;  邢艳辉;  牛智川
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GaAs基低密度量子点、量子环分子束外延生长 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  黄社松
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Extremely low density InAs quantum dots with no wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 4, 页码: 1025-1028
Authors:  Huang, SS (Huang She-Song);  Niu, ZC (Niu Zhi-Chuan);  Ni, HQ (Ni Hai-Qiao);  Zhan, F (Zhan Feng);  Zhao, H (Zhao Huan);  Sun, Z (Sun Zheng);  Xia, JB (Xia Jian-Bai);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@semi.ac.cn
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Droplet Epitaxy  
Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 12, 页码: 3376-3379
Authors:  Yang XH (Yang Xiao-Hong);  Han Q (Han Qin);  Ni HQ (Ni Hai-Qiao);  Huang SS (Huang She-Song);  Du Y (Du Yun);  Peng HL (Peng Hong-Ling);  Xiong YH (Xiong Yong-Hua);  Niu ZC (Niu Zhi-Chuan);  Wu RH (Wu Rong-Han);  Yang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: xhyang@red.semi.ac.cn
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新奇半导体低维结构的自组织生长 期刊论文
物理, 2006, 卷号: 35, 期号: 8, 页码: 654-658
Authors:  牛智川;  黄社松;  龚政;  方志丹;  倪海桥;  孙宝权;  李树深;  夏建白
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一种低密度InAs量子点的分子束外延生长方法 专利
专利类型: 发明, 专利号: CN200910235334.6, 公开日期: 2011-08-30
Inventors:  牛智川;  倪海桥;  王海莉;  贺继方;  朱岩;  李密峰;  王鹏飞;  黄社松;  熊永华
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