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Resonant tunneling diode with a multiplication region for light detection 期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 331, 页码: 94-97
Authors:  Dong, Yu;  Wang, Guanglong;  Ni, Haiqiao;  Chen, Jianhui;  Gao, Fengqi;  Qiao, Zhongtao;  Niu, Zhichuan
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 218
Authors:  Li, Jie;  Guo, Hao;  Liu, Jun;  Tang, Jun;  Ni, Haiqiao;  Shi, Yunbo;  Xue, Chenyang;  Niu, Zhichuan;  Zhang, Wendong;  Li, Mifeng;  Yu, Ying
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Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates 期刊论文
Russian Physics Journal, 2013, 卷号: 56, 期号: 1, 页码: 55-61
Authors:  Emelyanov, E. A.;  Kokhanenko, A. P.;  Pchelyakov, O. P.;  Loshkarev, I. D.;  Seleznev, V. A.;  Putyato, M. A.;  Semyagin, B. R.;  Preobrazhenskii, V. V.;  Niu, Zhicuan;  Ni, Haiqiao
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Electron spin dynamics study of bulk p-GaAs: The screening effect 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 012406
Authors:  Zhao, Chunbo;  Yan, Tengfei;  Ni, Haiqiao;  Niu, Zhichuan;  Zhang, Xinhui
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Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 113, 页码: 144-147
Authors:  Yang, Xiaoguang;  Wang, Kefan;  Gu, Yongxian;  Ni, Haiqiao;  Wang, Xiaodong;  Yang, Tao;  Wang, Zhanguo
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器 期刊论文
物理学报, 2012, 卷号: 61, 期号: 1, 页码: 018502-1-018502-5
Authors:  王杰,韩勤,杨晓红,倪海桥,贺继方,王秀平
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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