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大功率波长稳定激光器一级光栅的制备 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  王海丽
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InGaAs(Sb)/GaAs异变低维材料长波长激光器 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  王海莉
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分子束外延  异变  Ingaas量子阱  Inas量子点  激光器  
半导体InAs量子点单光子发射器件 期刊论文
物理, 2010, 卷号: 39, 期号: 11, 页码: 737-745
Authors:  牛智川;  孙宝权;  窦秀明;  熊永华;  王海莉;  倪海桥;  李树深;  夏建白
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Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 141-145
Authors:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN,Hong Kong Univ Sci & Technol,Dept Phys,Clear Water Bay,Kowloon,Hong Kong,Peoples R China.
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Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
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Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 8, 页码: 615-616
Authors:  Wang HL;  Feng SL;  Yang FH;  Sun BQ;  Jiang DS;  Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Growth  Gaas  Photoluminescence  Luminescence  Relaxation  Gaas(100)  Islands  
Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice 期刊论文
PHYSICAL REVIEW B, 1999, 卷号: 60, 期号: 12, 页码: 8866-8870
Authors:  Sun BQ;  Wang JN;  Ge WK;  Wang YQ;  Jiang DS;  Zhu HJ;  Wang HL;  Deng YM;  Feng SL;  Wang JN,Hong Kong Univ Sci & Technol,Dept Phys,Hong Kong,Peoples R China.
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Semiconductor Superlattices  Domains  Model  
Strain effect on the band structure of InAs/GaAs quantum dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 卷号: 38, 期号: 11, 页码: 6264-6265
Authors:  Zhu HJ;  Feng SL;  Jiang DS;  Deng YM;  Wang HL;  Zhu HJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Inas/gaas  Quantum Dots  Photoluminescence  Band Structure  Gaas  Relaxation  Temperature  
Effect of dopant on the uniformity of InAs self-organized quantum dots 期刊论文
ACTA PHYSICA SINICA-OVERSEAS EDITION, 1999, 卷号: 8, 期号: 8, 页码: 624-628
Authors:  Wang HL;  Zhu HJ;  Feng SL;  Ning D;  Wang H;  Wang XD;  Jiang DS;  Wang HL,Chinese Acad Sci,Natl Lab Superlattices & Microstruct,Inst Semicond,Beijing 100083,Peoples R China.
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Infrared-absorption  Growth  Gaas  
一种低密度InAs量子点的分子束外延生长方法 专利
专利类型: 发明, 专利号: CN200910235334.6, 公开日期: 2011-08-30
Inventors:  牛智川;  倪海桥;  王海莉;  贺继方;  朱岩;  李密峰;  王鹏飞;  黄社松;  熊永华
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