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Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101
Authors:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan;  Zheng-Xin Wen;  Wan-Shun Zhao;  Lei Wang;  Xing-Fang Liu;  Guo-Sheng Sun;  Yi-Ping Zeng
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Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文
EPL, 2010, 卷号: 90, 期号: 3, 页码: Art. No. 37004
Authors:  Gong M (Gong Ming);  Chen G (Chen Geng);  He LX (He Lixin);  Li CF (Li Chuan-Feng);  Tang JS (Tang Jian-Shun);  Sun FW (Sun Fang-Wen);  Niu ZC (Niu Zhi-Chuan);  Huang SS (Huang She-Song);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Guo GC (Guo Guang-Can);  Gong, M, Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China. 电子邮箱地址: helx@ustc.edu.cn;  cfli@ustc.edu.cn
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Phonon Coupling Regime  
直径六英寸半绝缘砷化镓单晶生长技术 成果
2007
Accomplishers:  李晋闽;  曾一平;  惠峰;  卜俊鹏;  王文军;  郑红军;  孙红方
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六英寸半绝缘砷化镓单晶  
可监测裂纹和变形的钢轨 专利
专利类型: 发明, 专利号: CN102121213A, 公开日期: 2012-09-07, 2011-07-13, 2012-09-07
Inventors:  张文涛;  孙宝臣;  杜彦良;  李芳;  刘育梁
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一种可监测裂纹和变形的钢轨 专利
专利类型: 发明, 专利号: CN201915301U, 公开日期: 2012-09-07, 2012-09-07, 2012-09-07
Inventors:  张文涛;  孙宝臣;  杜彦良;  李芳;  刘育梁
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