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Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文
Materials Science Forum, 2012, 卷号: 717-720, 页码: 105-108
Authors:  Zhao, Wanshun;  Sun, Guosheng;  Wu, Hailei;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Wang, Lei;  Liu, Xingfang;  Yang, Lijun
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Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Authors:  Yan, Guoguo;  Sun, Guosheng;  Wu, Hailei;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Yan, G.(ggyan@semi.ac.cn)
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Chemical Vapor Deposition  Deposition  Electric Resistance  Epitaxial Growth  Film Growth  Sheet Resistance  Silicon Carbide  Silicon Wafers  
4H-SiC 大功率肖特基二极管器件设计及工艺研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  吴海雷
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4H-SiC同质外延层中的扩展缺陷研究 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 3, 页码: 359-362
Authors:  闫果果;  孙国胜;  吴海雷;  王雷;  赵万顺;  刘兴昉;  董林;  郑柳;  曾一平
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Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Aluminum  Annealing  Ion implantatIon  Pressure Effects  Semiconducting Silicon Compounds  Silicon Carbide  Surface Roughness  
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Epitaxial Growth  Ethylene  Growth Rate  Morphology  Surface Roughness  
一种碳化硅同质PIN微结构材料及其制作方法 专利
专利类型: 发明, 专利号: CN200910237845.1, 公开日期: 2011-08-31
Inventors:  孙国胜;  刘兴昉;  王雷;  赵万顺;  杨挺;  吴海雷;  闫果果;  曾一平;  李晋闽
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碳化硅PIN微结构的制作方法 专利
专利类型: 发明, 专利号: CN102254798A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  孙国胜;  吴海雷;  郑柳;  刘兴昉;  王雷;  赵万顺;  闫果果
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