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Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate 期刊论文
Authors:  Li, Tianfeng;  Gao, Lizhen;  Lei, Wen;  Guo, Lijun;  Yang, Tao;  Chen, Yonghai;  Wang, Zhanguo
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InAs-mediated growth of vertical InSb nanowires on Si substrates 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8
Authors:  Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang
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Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文
Materials Science Forum, 2012, 卷号: 717-720, 页码: 105-108
Authors:  Zhao, Wanshun;  Sun, Guosheng;  Wu, Hailei;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Wang, Lei;  Liu, Xingfang;  Yang, Lijun
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Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 3, 页码: Art. No. 035303
Authors:  Li J;  Yang W;  Chang K;  Li J Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Electron-hole System  Band-structure  Compound Semiconductors  Relaxation Anisotropy  Gap Heterostructures  Optical-transitions  Ground-state  Superlattices  Field  Hybridization  
一种低发散角分布反馈量子级联激光器结构及制作方法 专利
专利类型: 发明, 公开日期: 2014-01-22
Inventors:  张锦川;  刘峰奇;  闫方亮;  姚丹阳;  王利军;  刘俊岐;  王占国
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一种低发散角的面區?射量子级联激光器结构 专利
专利类型: 发明, 公开日期: 2014-01-22
Inventors:  张锦川;  姚丹阳;  闫方亮;  刘峰奇;  王利军;  刘俊岐;  王占国
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可调谐分布反馈量子级联激光器阵列器件及其制备方法 专利
专利类型: 发明, 公开日期: 2014
Inventors:  闫方亮;  张锦川;  姚丹阳;  谭松;  王利军;  刘峰奇;  王占国
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一种可调谐衬底发射量子级联激光器阵列器件 专利
专利类型: 发明, 公开日期: 2014-04-09
Inventors:  闫方亮;  张锦川;  姚丹阳;  卓宁;  王利军;  刘峰奇;  王占国
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用于超薄半导体芯片接触式曝光的方法 专利
专利类型: 发明, 公开日期: 2013-07-10
Inventors:  梁平;  胡颖;  刘俊岐;  刘峰奇;  王利军;  张锦川;  王涛;  姚丹阳;  王占国
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双全息曝光制备量子级联激光器掩埋双周期光栅方法 专利
专利类型: 发明, 公开日期: 2013-05-08
Inventors:  姚丹阳;  张锦川;  闫方亮;  刘俊岐;  王利军;  刘峰奇;  王占国
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