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External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Authors:  Li WW (Li W. W.);  Zhu JJ (Zhu J. J.);  Liang JR (Liang J. R.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO(2) film near the metal-insulator transition region 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 24, 页码: 241903
Authors:  Li WW (Li W. W.);  Yu Q (Yu Q.);  Liang JR (Liang J. R.);  Jiang K (Jiang K.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 20, 页码: Art. No. 201102
Authors:  You JB (You J. B.);  Zhang XW (Zhang X. W.);  Zhang SG (Zhang S. G.);  Wang JX (Wang J. X.);  Yin ZG (Yin Z. G.);  Tan HR (Tan H. R.);  Zhang WJ (Zhang W. J.);  Chu PK (Chu P. K.);  Cui B (Cui B.);  Wowchak AM (Wowchak A. M.);  Dabiran AM (Dabiran A. M.);  Chow PP (Chow P. P.);  Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn;  paul.chu@cityu.edu.hk
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Zno  Deposition  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址: zhouwz@mail.sitp.ac.cn;  jhchu@mail.sitp.ac.cn
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Authors:  Zhou, WZ (Zhou, W. Z.);  Lin, T (Lin, T.);  Shang, LY (Shang, L. Y.);  Yu, G (Yu, G.);  Huang, ZM (Huang, Z. M.);  Guo, SL (Guo, S. L.);  Gui, YS (Gui, Y. S.);  Dai, N (Dai, N.);  Chu, JH (Chu, J. H.);  Cui, LJ (Cui, L. J.);  Li, DL (Li, D. L.);  Gao, HL (Gao, H. L.);  Zeng, YP (Zeng, Y. P.);  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Quantum Well  
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 3, 页码: Art.No.033705
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Quantum-well Structures  Photoluminescence Spectra  Hemts